International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF) 2011

The 2011 International Workshop on gDielectric Thin Films for Future Electron Devices: Science and Technologyh (IWDTF-11) will be held at Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan, on January 20-21, 2011. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. In succession to the second (IWDTF-04, Tokyo), the third (IWDTF-06, Kawasaki) and the fourth (IWDTF-08, Tokyo) workshops, the IWDTF-11 will focus on the science and technologies of dielectric films for electron devices, such as ultrathin SiO2, SiON, high-k dielectrics, and ferroelectric films. The topics on other technologies involved in the advanced gate stacks, which include metal gate electrodes and high-mobility channel materials, will also be discussed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researches on future electron devices. The papers on both experimental and theoretical studies, for the deep understanding of the properties of dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks, and poster presentations. Selected topics of current interests will be reviewed by several invited talks.