International Conference on Indium Phosphide & Related Materials (IPRM) 2013

IPRM2013 will be held at Kobe Convention Center, Kobe, Japan, from 19th to 23rd of May.

IPRM 2013 Invited Speakers
Gerhard Boehm, Stefan Sprengel, Kristijonas Vizbaras, Christian Grasse, Tobias Gruendl, Ralf Meyer, and Markus-Christian Amann, Walter Schottky Institut, "Light emission between 2 and 4 µm : Innovative active region designs for InP- and GaSb-based devices"
Brian R. Bennett and J. Brad Boos, Naval Research Laboratory, "Antimonide-Based Compound Semiconductors for Low-Power Electronics"
Yukihiro Shimogaki, Masakazu Sugiyama, and Yoshiaki Nakano, The University of Tokyo, "Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs"

Erik Bakkers, Eindhoven Univ of Technology, "New properties of wurtzite phosphide semiconductor nanowires"
Armando Rastelli, Institute of Semiconductor and Solid State Physics, "Reshaping the optical properties of quantum dots via strain and electric fields"
Gadi Eisenstein, Technion, "Highly non-linear phenomena and coherent effects in room temperature nano-scale semiconductors"
and many more.