7th International Conference on Group IV Photonics 2010
September 1 - 3, 2010
北京 , 中国
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The IEEE International Conference on Group IV Photonics (GFP) represents a major international forum to present and discuss recent research advances of photonic devices and materials based on group IV elements, and highlights the developments in Silicon Photonics. GPF 2010 is the seventh in a series which began in Hong Kong in 2004, and was hosted in rotation among Europe, North America and Asia. GPF 2010 will be held in Beijing, the capital city and a cultural, educational and scientific center of China, from 1 to 3 September 2010.
Topics of GFP 2010 span from fundamental research in novel devices and materials to the developments of photonic circuits using monolithic or hybrid integration technologies. Applications range from optical interconnects and communications to biomedical sensing devices, from novel concepts in solar cells to optical micro electro-mechanical systems. Contributions are solicited on recent developments in group IV photonic devices operating at wavelengths within the wide spectrum ranging from the ultraviolet to the very far infrared (terahertz). The conference also encourages contributions that describe monolithic or hybrid integration of compound semiconductor structures upon silicon. The topics are organized in 3 sections: ‘Photonic Devices and Nanophotonics’, ‘Silicon Photonics Integration and Active Device Technologies’, and ‘Advanced Material and Fabrication Technologies’.
All colleagues interested in the recent progresses and future challenges are invited to participate in GFP 2010 and encouraged to submit their technical contributions.
Topics of GFP 2010 span from fundamental research in novel devices and materials to the developments of photonic circuits using monolithic or hybrid integration technologies. Applications range from optical interconnects and communications to biomedical sensing devices, from novel concepts in solar cells to optical micro electro-mechanical systems. Contributions are solicited on recent developments in group IV photonic devices operating at wavelengths within the wide spectrum ranging from the ultraviolet to the very far infrared (terahertz). The conference also encourages contributions that describe monolithic or hybrid integration of compound semiconductor structures upon silicon. The topics are organized in 3 sections: ‘Photonic Devices and Nanophotonics’, ‘Silicon Photonics Integration and Active Device Technologies’, and ‘Advanced Material and Fabrication Technologies’.
All colleagues interested in the recent progresses and future challenges are invited to participate in GFP 2010 and encouraged to submit their technical contributions.
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